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The Ampleon BLF6G10L-260PRN is a 260 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It features an internally matched balanced ceramic package (SOT539A) with two mounting holes and four leads. The device operates at a drain-source voltage of 28 V, delivering 40 W average output power in dual-carrier W-CDMA mode with 22.0 dB gain and 26.5% efficiency. Key electrical parameters include a breakdown voltage of 65 V, threshold voltage of 1.9 V typ, and thermal resistance from junction to case of 0.28 K/W.
Verify the specific package variant required for the design, as the LS suffix denotes an earless flanged balanced ceramic package (SOT539B). Confirm that the application environment remains within the specified absolute maximum ratings, particularly regarding junction temperature limits and electrostatic discharge precautions during handling.
Select this component for broadband RF power amplifier designs requiring high linearity and efficiency in the 700 MHz to 1000 MHz band. Ensure the thermal management system can maintain the case temperature at or below 80 °C under full load conditions to guarantee stable operation and prevent exceeding the maximum junction temperature rating.
This part belongs to the Ampleon BLF6G10L series of power LDMOS transistors. The standard version utilizes the SOT539A flanged balanced ceramic package with mounting holes, while the LS variant uses the SOT539B earless flanged package. Both variants share identical electrical characteristics and are intended for cellular infrastructure.
The BLF6G10LS-260PRN serves as a direct alternative with an earless flanged balanced ceramic package (SOT539B). Verify mechanical compatibility with the existing heatsink and mounting structure before substitution.