BLF6G10LS-135RN:11

BLF6G10LS-135RN:11

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:e9179c8957c8 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:871.5MHz ~ 891.5MHz
  • Gain:21dB
  • Voltage - Test:28 V
  • Current Rating (Amps):32A
  • Noise Figure:-
  • Current - Test:950 mA
  • Power - Output:26.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

Download product information

BLF6G10LS-135RN:11

Overview

The Ampleon BLF6G10LS-135RN:11 is a 135 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates with a drain-source voltage of 28 V and quiescent current of 950 mA, delivering an average output power of 26.5 W per carrier in typical two-carrier W-CDMA configurations. The device features a thermal resistance from junction to case of 0.56 K/W at 25 W dissipation and achieves a drain efficiency of 28.0% with a power gain of 21.0 dB. Packaged in the SOT502B earless flanged ceramic format, it includes integrated ESD protection and is internally matched for simplified circuit integration.

Feature Summary

  • Internally matched for ease of use
  • Enhanced ruggedness capable of withstanding high VSWR
  • Integrated ESD protection

Applications

  • RF power amplifiers for GSM and GSM EDGE base stations
  • W-CDMA and CDMA base station power amplifiers
  • Multi-carrier applications in the 700 MHz to 1000 MHz range

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package variant and compliance status. Confirm that the component matches the required SOT502B earless flanged ceramic package specifications. Ensure design parameters align with the absolute maximum ratings provided in the datasheet to prevent permanent damage during operation.

Selection Notes

Select this component for broadband RF power amplifier designs operating between 700 MHz and 1000 MHz. The internal matching network simplifies input and output impedance requirements. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance to ensure reliable operation under continuous load conditions.

Part Context

This part belongs to the BLF6G10 series of power LDMOS transistors manufactured by Ampleon. The LS designation indicates the earless flanged ceramic package (SOT502B), which differs from the standard flanged version (SOT502A). This series is engineered specifically for high-efficiency performance in cellular infrastructure equipment.

Replacement Considerations

The BLF6G10-135RN serves as a direct functional equivalent within the same product family but utilizes the SOT502A package with mounting holes instead of the earless SOT502B configuration.

BLF6G10LS-135RN:11BLF6G10LS-135RN:11

Click on the inquiry