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The Ampleon BLF6G10LS-135RN:11 is a 135 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates with a drain-source voltage of 28 V and quiescent current of 950 mA, delivering an average output power of 26.5 W per carrier in typical two-carrier W-CDMA configurations. The device features a thermal resistance from junction to case of 0.56 K/W at 25 W dissipation and achieves a drain efficiency of 28.0% with a power gain of 21.0 dB. Packaged in the SOT502B earless flanged ceramic format, it includes integrated ESD protection and is internally matched for simplified circuit integration.
Verify the specific ordering suffix against official documentation to confirm package variant and compliance status. Confirm that the component matches the required SOT502B earless flanged ceramic package specifications. Ensure design parameters align with the absolute maximum ratings provided in the datasheet to prevent permanent damage during operation.
Select this component for broadband RF power amplifier designs operating between 700 MHz and 1000 MHz. The internal matching network simplifies input and output impedance requirements. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance to ensure reliable operation under continuous load conditions.
This part belongs to the BLF6G10 series of power LDMOS transistors manufactured by Ampleon. The LS designation indicates the earless flanged ceramic package (SOT502B), which differs from the standard flanged version (SOT502A). This series is engineered specifically for high-efficiency performance in cellular infrastructure equipment.
The BLF6G10-135RN serves as a direct functional equivalent within the same product family but utilizes the SOT502A package with mounting holes instead of the earless SOT502B configuration.