BLF6G10LS-260PRN,1

BLF6G10LS-260PRN,1

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-

SKU:8e58dc3af46e Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:917.5MHz ~ 962.5MHz
  • Gain:22dB
  • Voltage - Test:28 V
  • Current Rating (Amps):64A
  • Noise Figure:-
  • Current - Test:1.8 A
  • Power - Output:40W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-539B
  • Supplier Device Package:SOT539B
  • Configuration:Dual, Common Source

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BLF6G10LS-260PRN,1

Overview

The BLF6G10LS-260PRN,1 is a 260 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates with a drain-source voltage of 65 V and features an internal matching network. Typical performance at 920 MHz to 960 MHz includes 40 W average output power, 22.0 dB gain, and 26.5% efficiency under 2-carrier W-CDMA conditions. The device utilizes a flanged balanced ceramic package (SOT539B) with four leads.

Feature Summary

  • Internally matched for ease of use
  • Designed for broadband operation from 700 MHz to 1000 MHz
  • Integrated ESD protection
  • Excellent ruggedness and thermal stability

Applications

  • RF power amplifiers for GSM base stations
  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 700 MHz to 1000 MHz range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm the exact package variant and compliance status. Ensure that the procurement channel provides valid traceability for this RF power component. Confirm that the received units match the specified SOT539B earless flanged ceramic package configuration before integration into production circuits.

Selection Notes

Select this component for high-power base station amplifier designs requiring broadband coverage between 700 MHz and 1000 MHz. The integrated matching simplifies circuit design compared to unmatched counterparts. Verify that the application environment supports the required thermal management for the flanged ceramic package to maintain junction temperature within safe operating limits during continuous wave or high peak-to-average ratio modulation.

Part Context

This part belongs to the BLF6G10L(S)-260PRN family of power LDMOS transistors manufactured by Ampleon. The LS variant specifically denotes the earless flanged balanced ceramic package (SOT539B), distinguishing it from the standard flanged version (SOT539A). Both variants share identical electrical characteristics and are intended for similar high-power RF infrastructure applications.

Replacement Considerations

The BLF6G10L-260PRN serves as a functional equivalent within the same product family, differing only in the physical package configuration (SOT539A versus SOT539B). Designers must account for mechanical mounting differences when substituting between these two package styles.

BLF6G10LS-260PRN,1BLF6G10LS-260PRN,1

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