SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Ampleon BLF6G13LS-250PGJ is a 250 W LDMOS power transistor designed for continuous wave applications at 1.3 GHz. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 17 dB with a drain efficiency of 56% at 1 dB compression. The device features an earless flanged ceramic package (SOT1121E) with four leads and two mounting holes. Key electrical parameters include a junction-to-case thermal resistance of 0.26 K/W, a maximum junction temperature of 225 °C, and a drain-source breakdown voltage of 100 V.
Verify the specific ordering suffix against official documentation to confirm package variant and compliance status. Ensure that the procurement channel provides valid traceability for this RF component. Confirm RoHS Directive 2002/95/EC compliance requirements are met for the intended deployment environment before finalizing acquisition.
Select this component for designs requiring high efficiency and excellent thermal stability in class-AB operation. Verify impedance matching networks using the provided typical impedance values for gain and efficiency optimization. Ensure the application circuit supports the specified load mismatch conditions to maintain device ruggedness during operation.
This part belongs to the BLF6G13L(S)-250P family, which includes variants with different mechanical footprints such as SOT1121A and SOT1121B. The LS-250PG designation specifically indicates the earless flanged ceramic package configuration suitable for direct mounting without additional hardware modifications.
BLF6G13L-250P
The device can withstand a load mismatch corresponding to a VSWR of 5:1 through all phases under specified operating conditions.
The thermal resistance from junction to case is typically 0.26 K/W when operating at a case temperature of 85 °C with 250 W output power.