BLF6G13LS-250PGJ

BLF6G13LS-250PGJ

$188.82
  • Description:RF FET LDMOS 100V 17DB SOT1121E
  • Series:-

SKU:499767fea2cd Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF FET LDMOS 100V 17DB SOT1121E
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.3GHz
  • Gain:17dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:250W
  • Voltage - Rated:100 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1121E
  • Supplier Device Package:CDFM4
  • Configuration:-

Download product information

BLF6G13LS-250PGJ

Overview

The Ampleon BLF6G13LS-250PGJ is a 250 W LDMOS power transistor designed for continuous wave applications at 1.3 GHz. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 17 dB with a drain efficiency of 56% at 1 dB compression. The device features an earless flanged ceramic package (SOT1121E) with four leads and two mounting holes. Key electrical parameters include a junction-to-case thermal resistance of 0.26 K/W, a maximum junction temperature of 225 °C, and a drain-source breakdown voltage of 100 V.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency

Applications

  • Industrial, scientific and medical applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package variant and compliance status. Ensure that the procurement channel provides valid traceability for this RF component. Confirm RoHS Directive 2002/95/EC compliance requirements are met for the intended deployment environment before finalizing acquisition.

Selection Notes

Select this component for designs requiring high efficiency and excellent thermal stability in class-AB operation. Verify impedance matching networks using the provided typical impedance values for gain and efficiency optimization. Ensure the application circuit supports the specified load mismatch conditions to maintain device ruggedness during operation.

Part Context

This part belongs to the BLF6G13L(S)-250P family, which includes variants with different mechanical footprints such as SOT1121A and SOT1121B. The LS-250PG designation specifically indicates the earless flanged ceramic package configuration suitable for direct mounting without additional hardware modifications.

Replacement Considerations

BLF6G13L-250P

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 5:1 through all phases under specified operating conditions.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is typically 0.26 K/W when operating at a case temperature of 85 °C with 250 W output power.

BLF6G13LS-250PGJBLF6G13LS-250PGJ
$188.82
Buy Now