SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF6G15LS-40RN is a 40 W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It features an internally matched design and integrated ESD protection. Typical performance at 28 V supply and 375 mA quiescent current includes 2.5 W average output power, 22.5 dB gain, 13.5% efficiency, and -45 dBc ACPR under 2-carrier W-CDMA conditions. The device operates with a drain-source voltage up to 65 V and junction temperature up to 200 °C.
Verify the specific package variant required: BLF6G15L-40RN uses SOT1135A (flanged ceramic with mounting holes), while BLF6G15LS-40RN uses SOT1135B (earless flanged ceramic). Confirm RoHS compliance status and check for the latest product data sheet revision on the manufacturer website before finalizing procurement specifications.
Select this component for broadband RF power amplifier designs operating between 1450 MHz and 1550 MHz. Ensure the thermal management system can maintain the case temperature within limits given the 1.30 K/W junction-to-case thermal resistance. Verify that the load impedance matches the typical values provided for the target frequency to achieve optimal gain and efficiency.
This part belongs to the BLF6G15L(S)-40RN series from Ampleon, a manufacturer specializing in RF power solutions. The series includes variants like BLF6G15L-40RN and BLF6G15LS-40RN, differentiated primarily by their physical package configurations. These transistors are engineered for high reliability in wireless infrastructure environments.
BLF6G15L-40RN serves as the functional equivalent with a different package outline (SOT1135A vs SOT1135B). No other cross-manufacturer substitutes are documented in the official datasheet.