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The BLF6G20-110 is a 110 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 25 W in two-carrier W-CDMA mode, achieving a power gain of 19 dB and drain efficiency of 32%. The device features a flanged ceramic package (SOT502A) with integrated ESD protection and internal matching. Limiting values include a maximum drain-source voltage of 65 V and a junction temperature rating up to 225 °C.
Verify the specific package variant required, as the BLF6G20-110 corresponds to the SOT502A flanged ceramic package with mounting holes. Confirm that the application environment does not exceed the absolute maximum ratings, particularly the 225 °C junction temperature limit. Ensure proper handling procedures are followed due to the device's sensitivity to electrostatic discharge during transport and installation.
Select this component for broadband operations between 1800 MHz and 2000 MHz requiring high power output. The internal matching network simplifies impedance matching requirements compared to unmated devices. Consider the thermal resistance characteristics when designing heat sinks, as the junction-to-case thermal resistance is specified at 0.52 K/W under typical operating conditions.
This part belongs to the Ampleon BLF6G20 series of power LDMOS transistors. The datasheet also covers the BLF6G20LS-110 variant, which utilizes the SOT502B earless flanged package. Both variants share identical electrical specifications and performance characteristics, differing only in their physical mounting configurations.
Public confirmed substitute part numbers: BLF6G20LS-110.