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The BLF6G20LS-110,118 is a power LDMOS transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 65 V and a test voltage of 28 V. In a typical two-carrier W-CDMA configuration at 1930 MHz to 1990 MHz, it delivers an average output power of 25 W with a power gain of 19 dB and drain efficiency of 32%. The device features a thermal resistance from junction to case of 0.45 K/W at Tcase = 80 °C and PL = 25 W (CW). It utilizes an earless flanged LDMOST ceramic package (SOT502B) with two leads.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging and handling specifications. Confirm that the component meets current RoHS compliance standards as defined in the product data sheet. Ensure proper ESD precautions are observed during storage and assembly due to the sensitivity of the LDMOS technology.
Select this component for linear RF power amplifier designs requiring high efficiency and ruggedness in the 1800 MHz to 2000 MHz band. Consider the SOT502B earless flanged package for mounting constraints. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify compatibility with standard 28 V supply voltages used in base station architectures.
This part belongs to the BLF6G20 series of power LDMOS transistors manufactured by Ampleon USA Inc. The LS variant specifically denotes the earless flanged LDMOST ceramic package (SOT502B), distinguishing it from the standard flanged version with mounting holes. These devices are engineered for robust performance in demanding wireless infrastructure environments.
Consult the official Ampleon datasheet for direct cross-references. The BLF6G20-110 serves as the functional equivalent but utilizes a different package (SOT502A) with mounting holes. Verify pinout compatibility and mechanical dimensions before substitution.