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The BLF6G20LS-75,118 is a power LDMOS transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features an earless flanged ceramic package (SOT502B) with two leads and a drain connected to the flange. The device supports a maximum drain-source voltage of 65 V and a junction temperature up to 225 °C. In CW operation at 1930–1990 MHz with a 28 V supply, it delivers 63 W output power with 19 dB gain and 52% efficiency. For GSM EDGE signals, it provides 29.5 W average output power, 19 dB gain, 37.5% efficiency, -61.5 dBc ACPR at 400 kHz, and 1.7% RMS EVM.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status as required by local regulations. Check for any recent product change notices or obsolescence announcements from Ampleon prior to finalizing procurement plans.
Select this component for broadband operations between 1800 MHz and 2000 MHz where high efficiency and ruggedness are critical. Ensure the design accommodates the SOT502B flanged package dimensions and mounting requirements. Verify that the application circuit can maintain the case temperature within specified limits to achieve optimal performance and reliability.
This part belongs to the BLF6G20 series of power LDMOS transistors manufactured by Ampleon USA Inc. The LS suffix indicates the earless flanged ceramic package version (SOT502B), distinct from the standard flanged version (SOT502A). These devices are engineered specifically for cellular infrastructure power amplifier modules operating in the PCS/IMT bands.
The datasheet lists the BLF6G20-75 as the primary counterpart with a different package (SOT502A). No other direct substitute part numbers are documented in the official data sheet. Designers must verify mechanical footprint compatibility when considering alternative packages.