BLF6G21-10G,112

BLF6G21-10G,112

$33.46
  • Description:RF MOSFET LDMOS 28V 2CSMD
  • Series:-

SKU:deee6390d6c1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V 2CSMD
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:18.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:700mW
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-538A
  • Supplier Device Package:2-CSMD
  • Configuration:-

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BLF6G21-10G,112

Overview

The BLF6G21-10G is a 10 W LDMOS power transistor designed for base station applications across the HF to 2200 MHz frequency range. It operates at a supply voltage of 28 V with a drain-source breakdown voltage of 65 V and a maximum junction temperature of 225 °C. In typical 1-carrier W-CDMA mode, it delivers 2 W average output power with 19.3 dB gain and 31% efficiency. For 2-carrier W-CDMA, it provides 0.7 W output power with 18.5 dB gain and 15% efficiency. The device features integrated ESD protection and requires no internal matching for broadband operation.

Feature Summary

  • Integrated electrostatic discharge (ESD) protection
  • No internal matching required for broadband operation
  • Excellent thermal stability and ruggedness in class-AB operation

Applications

  • RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations
  • Multi-carrier applications in the HF to 2200 MHz frequency range
  • Broadcast drivers

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and compliance status. Confirm product status as current or obsolete through authorized channels before design finalization. Ensure handling procedures account for ESD sensitivity during transport and assembly.

Selection Notes

Select this component for wideband RF power amplifier designs requiring high efficiency and ruggedness in cellular base station environments. Evaluate thermal resistance characteristics relative to the intended heat sink configuration. Verify that the operating frequency and power requirements align with the specified performance curves for both CW and modulated signal modes.

Part Context

This device belongs to the BLF6G21 series of LDMOS power transistors manufactured by Ampleon USA Inc. It utilizes a ceramic surface-mounted SOT538A package with two leads. The part is specifically engineered for multi-carrier modulation schemes common in wireless communication infrastructure.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Cross-compatibility claims should be avoided unless explicitly supported by manufacturer data sheets. Verify pinout and thermal specifications when considering alternative components.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF6G21-10G can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

Does the device require internal matching networks?

No, the BLF6G21-10G does not require internal matching for broadband operation.

What is the typical gate-source threshold voltage?

The typical gate-source threshold voltage is 1.9 V, with a minimum of 1.4 V and a maximum of 2.4 V.

BLF6G21-10G,112BLF6G21-10G,112
$33.46
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