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The BLF6G21-10G is a 10 W LDMOS power transistor designed for base station applications across the HF to 2200 MHz frequency range. It operates at a drain-source voltage of 28 V with a typical quiescent current of 100 mA. In 1-carrier W-CDMA mode, it delivers 2 W average output power with 19.3 dB gain and 31% efficiency. For 2-carrier W-CDMA, it provides 0.7 W output power, 18.5 dB gain, and 15% efficiency. The device features a ceramic surface-mounted SOT538A package with an integrated ESD protection structure.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details. Confirm that the component status aligns with current production requirements before finalizing design-in decisions. Ensure compliance with RoHS directives as specified in the product data sheet.
Select this component for wideband RF power amplifier designs operating between HF and 2200 MHz. The device requires a 28 V supply and supports class-AB operation. Designers must account for the thermal resistance from junction to case when calculating heat dissipation requirements for the application board.
This part belongs to the BLF series of power LDMOS transistors manufactured by Ampleon USA Inc. The BLF6G21-10G specifically targets multi-carrier base station infrastructure. It utilizes advanced LDMOS technology to provide high efficiency and linearity for cellular communication standards.
No official substitute part numbers are documented in the provided datasheet. Engineers should evaluate alternative components based on matching electrical parameters such as output power, gain, and package dimensions while verifying compatibility with existing circuit layouts.
The BLF6G21-10G can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.
No, the device is designed for broadband operation and does not require internal matching networks.
The gate-source threshold voltage typically ranges from 1.4 V to 2.4 V.