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The BLF6G22-45,112 is a 45 W LDMOS power transistor manufactured by Ampleon USA Inc., designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internal matching network. The device utilizes a flanged ceramic SOT608A package with two mounting holes and two leads. Key electrical parameters include a typical power gain of 18.5 dB, drain efficiency of 13%, and an adjacent channel power ratio (ACPR) of -49 dBc under 2-carrier W-CDMA test conditions at 2110 MHz and 2170 MHz.
Verify the specific ordering suffix against official documentation to confirm package details and compliance status. Confirm current product availability and lifecycle status directly with the manufacturer or authorized distributors, as component statuses may change over time. Ensure all handling precautions for electrostatic sensitive devices are strictly followed during procurement and storage.
Select this component for broadband RF power amplifier designs operating between 2000 MHz and 2200 MHz. Ensure the application circuit supports a 28 V supply voltage and accommodates the required quiescent current. Verify that the host system provides adequate thermal management to maintain junction temperatures within the specified limits during high-power operation.
This part belongs to the BLF6G22 series of power LDMOS transistors from Ampleon. The series is engineered for robust performance in wireless communication infrastructure. The BLF6G22-45 variant specifically targets the UMTS/W-CDMA bands, offering a balance of output power and linearity suitable for modern cellular base station architectures.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the 28 V operating voltage, 2000 MHz to 2200 MHz frequency range, and SOT608A package footprint. Cross-compatibility claims should be avoided without explicit manufacturer confirmation.