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The BLF6G22L-40BN is a 40 W LDMOS power transistor designed for base station applications operating between 2000 MHz and 2200 MHz. It features an internally matched design with integrated ESD protection and current sensing capabilities. The device operates at a supply voltage of 28 V, with a drain-source breakdown voltage of 65 V and a maximum junction temperature of 200 °C. In typical two-carrier W-CDMA performance at 2110 MHz to 2170 MHz, it delivers an average output power of 2.5 W with a power gain of 19 dB and drain efficiency of 16%. The component utilizes a flanged ceramic package (SOT1112A) with six leads.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package and handling specifications. Confirm RoHS compliance status as required by local regulations. Check product status updates on the manufacturer website, as availability may change. Ensure proper ESD precautions are maintained during transport and handling due to device sensitivity.
Select this component for broadband RF power amplifier designs requiring operation within the 2000 MHz to 2200 MHz band. Consider the thermal resistance from junction to case when designing heat dissipation solutions. Verify that the application circuit supports the required quiescent current and supply voltage levels for optimal performance.
This part belongs to the BLF6G22 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series is specifically engineered for wireless communication infrastructure, providing high efficiency and linearity for multi-carrier modulation schemes used in modern cellular networks.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility regarding pin configuration, package dimensions, and electrical characteristics such as breakdown voltage and thermal resistance.