BLF6G22LS-100,118

Overview

The BLF6G22LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internal matching network. In typical 2-carrier W-CDMA operation at 2110 MHz to 2170 MHz, it delivers 25 W average output power with 18.2 dB gain, 29% efficiency, -37 dBc IMD3, and -41 dBc ACPR. The device has a maximum drain-source breakdown voltage of 65 V and a junction temperature rating up to 225 °C.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability

Applications

• RF power amplifiers for W-CDMA base stations
• Multi carrier applications in the 2000 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance status as required by local regulations. Check for any product change notices or obsolescence alerts directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for broadband RF power amplifier designs operating between 2000 MHz and 2200 MHz. Ensure the application circuit can support the required 28 V supply voltage and manage the thermal resistance from junction to case effectively. Verify that the load impedance matches the internal matching network requirements for optimal performance.

Part Context

This part belongs to the BLF6G22LS series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for high-efficiency RF power amplification in cellular infrastructure. The device utilizes an earless flanged ceramic package (SOT502B) suitable for mounting on heatsinks.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the SOT502B package dimensions, pinout configuration, and electrical characteristics such as breakdown voltage and thermal resistance.