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The BLF6G22LS-130 is a power LDMOS transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It delivers an average output power of 30 W under typical two-carrier W-CDMA conditions at 28 V supply voltage and 1100 mA quiescent current. The device features a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.4 V to 2.4 V, and a forward transconductance of 12 S. Thermal resistance from junction to case is typically 0.43 K/W. It utilizes an earless flanged ceramic package (SOT502B) with three pins: drain, gate, and source.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the SOT502B earless flanged ceramic outline. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and installation to prevent device degradation.
Select this component for broadband operations between 2000 MHz and 2200 MHz requiring high linearity and power density. Verify that the application circuit can maintain the recommended 28 V supply and 1100 mA quiescent current. Ensure the design accommodates the specified thermal resistance and junction temperature limits for reliable operation.
This part belongs to the Ampleon BLF series of LDMOS power transistors specifically engineered for telecommunications infrastructure. It serves as a core active element in RF power amplifier modules, providing the necessary gain and output power for cellular network base stations operating in the 2100 MHz band.
No official substitute part numbers are documented in the provided data sheet. When evaluating alternatives, verify compatibility regarding pin configuration, package dimensions (SOT502B), electrical ratings, and thermal characteristics to ensure seamless integration into existing designs.