BLF6G22LS-40P,112

Overview

The BLF6G22LS-40P is an LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz frequency bands. It operates with a drain-source voltage of 28 V and delivers average output powers of 13.5 W (2-carrier) and 15 W (1-carrier) at 2110–2170 MHz, or 5 W at 1805–1880 MHz. The device features a typical power gain of 19 dB and drain efficiency up to 32% under Class AB operation. It utilizes a flanged ceramic package (SOT1121B) with four leads and includes integrated ESD protection.

Feature Summary

• Internally matched design for ease of use
• Integrated electrostatic discharge (ESD) protection
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance optimized for Doherty applications

Applications

• RF power amplifier for base stations in the 2110 MHz to 2170 MHz band
• Multi-carrier applications in the 2110 MHz to 2170 MHz band
• RF driver amplifier in the 1805 MHz to 1880 MHz band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status and export control classifications prior to procurement. Ensure that the supply chain source provides valid traceability documentation consistent with Ampleon's product specifications.

Selection Notes

Select this component for high-efficiency RF power amplification in multi-carrier base station architectures. The internal matching network simplifies circuit design, while low memory effects support advanced linearization techniques. Evaluate thermal management requirements based on the junction-to-case thermal resistance specification for the intended operating environment.

Part Context

This part belongs to the BLF6G22L/BLF6G22LS series of power LDMOS transistors manufactured by Ampleon USA Inc. The 'LS' designation indicates an earless flanged ceramic package (SOT1121B), distinct from the standard flanged version (SOT1121A). Both variants share identical electrical characteristics and are intended for wireless communication infrastructure.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with existing impedance matching networks and thermal interface materials. Ensure replacement devices meet the same ruggedness requirements, specifically the ability to withstand a VSWR of 10:1 through all phases.