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The BLF6G22S-45 is a 45 W LDMOS power transistor designed for base station applications operating between 2000 MHz and 2200 MHz. It features an internally matched design within a ceramic earless flanged SOT608B package. Typical performance at 2110 MHz to 2170 MHz with a 28 V supply includes 2.5 W average output power, 18.5 dB gain, 13% efficiency, and -48 dBc ACPR under 2-carrier W-CDMA conditions. The device withstands a VSWR of 10:1 at 45 W CW output. Drain-source breakdown voltage is 65 V, and the junction temperature limit is 225 °C.
Verify the specific ordering suffix and package version when sourcing components. Confirm RoHS compliance status through official manufacturer channels or authorized distributors. Ensure handling procedures account for electrostatic discharge sensitivity during transport and assembly processes.
Select this component for broadband operations requiring high linearity and power control ease. Evaluate thermal resistance requirements based on the specified junction-to-case value. Ensure the application environment supports the maximum junction temperature limits defined in the absolute maximum ratings.
This part belongs to Ampleon's portfolio of LDMOS power transistors optimized for wireless infrastructure. It utilizes advanced lateral diffusion metal-oxide semiconductor technology to deliver reliable performance in demanding RF environments. The product is engineered for consistent yield and long-term operational stability in macro base station deployments.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify matching frequency ranges, power output capabilities, and package compatibility. Cross-compatibility claims should be avoided without explicit manufacturer confirmation.