BLF6G27-10G,118

BLF6G27-10G,118

$33.58
  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-

SKU:8d2c6a0440af Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:19dB
  • Voltage - Test:28 V
  • Current Rating (Amps):3.5A
  • Noise Figure:-
  • Current - Test:130 mA
  • Power - Output:2W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-975C
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLF6G27-10G,118

Overview

The BLF6G27-10G,118 is a dual N-channel LDMOS RF power transistor manufactured by Ampleon USA Inc. Designed for broadband applications in the 2300 MHz to 2700 MHz frequency range, this component utilizes advanced silicon LDMOS technology. It features a robust construction suitable for high-power density operations, typically delivering significant output power with high gain efficiency. The device is housed in a surface-mount SOT511 package, facilitating integration into compact RF amplifier modules and base station architectures requiring reliable performance across wide bandwidths.

Feature Summary

  • Dual N-channel LDMOS architecture for balanced power distribution
  • Broadband capability covering 2.3 GHz to 2.7 GHz spectrum
  • High power density design optimized for cellular infrastructure
  • Surface-mount SOT511 package for automated assembly

Applications

  • 4G LTE and 5G NR cellular base station power amplifiers
  • Broadband RF signal generation systems
  • Industrial, Scientific, and Medical (ISM) equipment
  • Wireless communication infrastructure modules

Procurement Notes

Verify the specific suffix '118' against the official Ampleon datasheet to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and check for any Product Change Notifications (PCN) related to manufacturing site transfers or material updates. Ensure compatibility with existing PCB footprints for the SOT511 package before finalizing procurement orders.

Selection Notes

Select this component when designing amplifiers for the 2300-2700 MHz band requiring dual-channel symmetry. Evaluate thermal management requirements based on the specified drain voltage and output power levels. Compare gain and linearity metrics against alternative LDMOS devices in the same family to ensure optimal system efficiency and impedance matching network design.

Part Context

This part belongs to the BLF6G series of broadband LDMOS transistors from Ampleon. The series is engineered for cost-effective, high-volume production of RF power amplifiers. The '27' designation typically indicates the target frequency band around 2.7 GHz, while '10G' often refers to specific gain or power variants within the product line. These devices are foundational components in modern mobile telecommunications infrastructure.

Replacement Considerations

Consult the Ampleon replacement guide for direct equivalents within the BLF6G family. Verify pinout compatibility and thermal characteristics if substituting with other SOT511 packages. Cross-reference electrical parameters such as Vds, Pd, and Gain to ensure the alternative meets the original circuit design constraints without requiring significant schematic modifications.

BLF6G27-10G,118BLF6G27-10G,118
$33.58
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