BLF6G27-10GHJ

BLF6G27-10GHJ

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-

SKU:3e7600b9893c Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:19dB
  • Voltage - Test:28 V
  • Current Rating (Amps):3.5A
  • Noise Figure:-
  • Current - Test:130 mA
  • Power - Output:2W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-975C
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLF6G27-10GHJ

Overview

The BLF6G27-10GHJ is a plastic LDMOS power transistor manufactured by Ampleon USA Inc. Designed for base station applications, it operates at frequencies from 700 MHz to 2700 MHz with a rated output power of 10 W. The device features high efficiency and excellent ruggedness suitable for broadband operation. It includes integrated ESD protection and complies with RoHS directives. The component utilizes a surface-mount package configuration optimized for thermal stability in wireless communication infrastructure.

Feature Summary

  • High efficiency and excellent ruggedness for reliable performance
  • Designed for broadband operation across multiple frequency bands
  • Integrated ESD protection for enhanced device durability

Applications

  • CDMA base stations
  • W-CDMA infrastructure
  • GSM EDGE networks
  • LTE systems
  • WiMAX deployments

Procurement Notes

Verify the specific suffix GHJ against official Ampleon documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with existing PCB land patterns and thermal management designs before procurement. Confirm RoHS3 compliance status through current datasheets.

Selection Notes

Select this component for wideband cellular base station amplifiers requiring 10 W output. Evaluate thermal resistance requirements for the chosen package variant. Compare gain and efficiency metrics against system specifications within the 700 MHz to 2700 MHz operational range.

Part Context

This part belongs to the BLF6G27 series of LDMOS transistors developed for wireless communications. It represents an evolution of earlier NXP Semiconductors designs following Ampleon's separation. The device serves as a key active component in RF power amplification stages for modern mobile network infrastructure.

Replacement Considerations

Direct replacements may include other BLF6G27 variants with different suffixes indicating package or reel differences. Verify pinout compatibility and electrical parameters before substitution. Consult Ampleon engineering for cross-reference validation.

BLF6G27-10GHJBLF6G27-10GHJ

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