SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF6G27L-50BN is a 50 W LDMOS power transistor designed for base station applications operating between 2500 MHz and 2700 MHz. It features internal matching, integrated ESD protection, and current sensing capabilities. The device operates with a drain-source voltage of 28 V and a quiescent current of 430 mA. In a 2-carrier W-CDMA test configuration, it delivers an average output power of 3 W with a power gain of 16.5 dB, drain efficiency of 14.5%, and an adjacent channel power ratio (ACPR) of -47 dBc. The component utilizes the SOT1112A flanged ceramic package.
Verify the specific ordering suffix BN to ensure correct package configuration and compliance status. Confirm that the requested quantity aligns with manufacturer distribution channels. Validate RoHS Directive 2002/95/EC compliance requirements against local environmental regulations before finalizing procurement orders.
Select this component for designs requiring broadband operation within the 2500 MHz to 2700 MHz spectrum. Ensure the thermal management system maintains the case temperature at 25 °C during production testing to achieve specified performance metrics. Verify that the application supports Class-AB operation conditions for optimal linearity and efficiency balance.
This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for wireless infrastructure. It serves as a specialized solution for cellular base station architectures, specifically targeting frequency bands associated with 3GPP standards. The device integrates robust handling characteristics suitable for high-volume manufacturing environments.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the SOT1112A package dimensions and mounting hole configurations. Ensure replacement devices support the required 28 V drain-source voltage and provide comparable ruggedness under VSWR conditions.