BLF6G27L-50BN,118

BLF6G27L-50BN,118

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-

SKU:577d627e8d8d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:430 mA
  • Power - Output:3W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1112A
  • Supplier Device Package:CDFM6
  • Configuration:Dual, Common Source

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BLF6G27L-50BN,118

Overview

The BLF6G27L-50BN is a 50 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internally matched design for ease of use. The device includes integrated ESD protection, current sense capabilities, and excellent thermal stability. Typical performance at Tcase = 25 °C shows a power gain of 16.5 dB, drain efficiency of 14.5%, and ACPR of -47 dBc under 2-carrier W-CDMA conditions. The limiting drain-source voltage is 65 V, and the junction temperature maximum is 200 °C.

Feature Summary

  • Internally matched for simplified circuit integration
  • Integrated electrostatic discharge (ESD) protection
  • Built-in current sensing capability
  • High ruggedness against load mismatches

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz range
  • W-CDMA signal processing

Procurement Notes

Verify the specific ordering suffix and package version when sourcing components. Confirm RoHS compliance status through official manufacturer channels. Ensure handling procedures adhere to ESD safety standards due to the sensitivity of the semiconductor structure. Cross-reference datasheet revisions to ensure compatibility with existing designs.

Selection Notes

Select this component for broadband operations requiring high efficiency and ruggedness in Class-AB configurations. Evaluate thermal resistance requirements based on the specified junction-to-case characteristics. Consider the internal matching network when designing impedance circuits. Verify that the operating frequency falls within the 2500 MHz to 2700 MHz specification.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors derived from legacy NXP technologies. It utilizes LDMOS technology optimized for cellular infrastructure. The SOT1112A flanged ceramic package facilitates efficient heat dissipation for high-power density applications.

Replacement Considerations

Consult official Ampleon documentation for direct cross-references. Previous versions such as BLF6G27L-50BN v.3 may share similar electrical profiles but require verification of pinout and thermal specifications before substitution.

BLF6G27L-50BN,118BLF6G27L-50BN,118

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