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The BLF6G27L-50BN is a 50 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internally matched design for ease of use. The device includes integrated ESD protection, current sense capabilities, and excellent thermal stability. Typical performance at Tcase = 25 °C shows a power gain of 16.5 dB, drain efficiency of 14.5%, and ACPR of -47 dBc under 2-carrier W-CDMA conditions. The limiting drain-source voltage is 65 V, and the junction temperature maximum is 200 °C.
Verify the specific ordering suffix and package version when sourcing components. Confirm RoHS compliance status through official manufacturer channels. Ensure handling procedures adhere to ESD safety standards due to the sensitivity of the semiconductor structure. Cross-reference datasheet revisions to ensure compatibility with existing designs.
Select this component for broadband operations requiring high efficiency and ruggedness in Class-AB configurations. Evaluate thermal resistance requirements based on the specified junction-to-case characteristics. Consider the internal matching network when designing impedance circuits. Verify that the operating frequency falls within the 2500 MHz to 2700 MHz specification.
This part belongs to Ampleon's portfolio of RF power transistors derived from legacy NXP technologies. It utilizes LDMOS technology optimized for cellular infrastructure. The SOT1112A flanged ceramic package facilitates efficient heat dissipation for high-power density applications.
Consult official Ampleon documentation for direct cross-references. Previous versions such as BLF6G27L-50BN v.3 may share similar electrical profiles but require verification of pinout and thermal specifications before substitution.