BLF6G27LS-40P,112

Overview

The BLF6G27LS-40P is a 40 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range, with suitability for 2300 MHz to 2400 MHz operation. It supports single carrier IS-95 and 3GPP W-CDMA standards. Typical performance at Tcase = 25 °C includes a drain efficiency of 30% at 12 W output power for IS-95, and 37% at 20 W for W-CDMA. The device operates with a drain-source voltage of 28 V and a quiescent current of 450 mA. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a junction-to-case thermal resistance of 0.7 K/W, and a forward transconductance of 2.9 S.

Feature Summary

• Designed for broadband operation with lower output capacitance to improve Doherty application performance.
• Optimized design provides low memory effects for excellent pre-distortability.
• Features integrated ESD protection and internal matching for ease of use.
• Constructed with low thermal resistance to ensure excellent thermal stability.

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 2500 MHz to 2700 MHz frequency range
• Single carrier IS-95 systems

Procurement Notes

Verify the specific package variant required, as the datasheet covers three distinct versions: BLF6G27L-40P (SOT1121A), BLF6G27LS-40P (SOT1121B), and BLF6G27LS-40PG (SOT1121E). Confirm that the ordering suffix matches the desired lead frame configuration before finalizing procurement. Ensure compliance with RoHS Directive 2002/95/EC requirements during the sourcing process.

Selection Notes

Select this component for high-efficiency RF power amplification in cellular infrastructure. The device is specifically engineered for Class-AB operation with low memory effects, making it suitable for complex modulation schemes requiring linearization. Consider the ruggedness specifications when designing for environments with potential load mismatches up to 10:1 VSWR.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors intended for wireless communication infrastructure. The BLF6G27LS-40P shares functional similarities with the BLF6G27L-40P and BLF6G27LS-40PG, differing primarily in physical package dimensions and lead configurations rather than core electrical performance.

Replacement Considerations

Direct replacements are limited to the other package variants within the same datasheet family: BLF6G27L-40P and BLF6G27LS-40PG. These share identical electrical specifications but differ in mechanical footprint. Verify PCB layout compatibility before substituting between SOT1121A, SOT1121B, and SOT1121E packages.