BLF6G27LS-40P,118

BLF6G27LS-40P,118

$64.46
  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-

SKU:24c74bdcbf28 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:17.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:450 mA
  • Power - Output:12W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1121B
  • Supplier Device Package:LDMOST
  • Configuration:Dual, Common Source

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BLF6G27LS-40P,118

Overview

The BLF6G27LS-40P is a 40 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range, with suitability for 2300 MHz to 2400 MHz operation. It features a drain-source voltage of 65 V and operates at a typical drain current of 450 mA. In single carrier W-CDMA tests at 28 V, it delivers 20 W average output power with 17.5 dB gain and 37% drain efficiency. The device exhibits low thermal resistance of 0.7 K/W and is internally matched for ease of integration.

Feature Summary

  • Designed for broadband operation with lower output capacitance to improve performance in Doherty configurations
  • Optimized for low memory effects to provide excellent pre-distortability
  • Internally matched for simplified circuit design and integrated ESD protection
  • Constructed with low thermal resistance to ensure excellent thermal stability

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz frequency range
  • Single carrier IS-95 systems with pilot, paging, sync, and traffic channels

Procurement Notes

Verify the specific package variant required for the design, as the datasheet covers multiple pinning options including SOT1121A, SOT1121B, and SOT1121E. Confirm that the ordering suffix matches the desired lead configuration. Ensure compliance with RoHS directives is documented for the specific batch. Validate component authenticity through authorized distribution channels before integration into production hardware.

Selection Notes

Select this component for high-efficiency RF power amplification in cellular infrastructure. The device supports Class-AB operation with robust ruggedness against load mismatches up to 10:1 VSWR. Consider the internal matching network to reduce external component count. Evaluate thermal management requirements based on the junction-to-case thermal resistance specification for the intended enclosure environment.

Part Context

This part belongs to the Ampleon BLF6G27L series of power LDMOS transistors. The series includes variants such as BLF6G27L-40P and BLF6G27LS-40PG, which share similar electrical characteristics but differ in physical package outlines and lead configurations. These devices are engineered for high reliability in demanding wireless communication environments.

Replacement Considerations

Direct substitutes within the same family include BLF6G27L-40P and BLF6G27LS-40PG. Verify mechanical compatibility by comparing the specific package outline (SOT1121A, B, or E) against the existing PCB footprint. Electrical parameters remain consistent across these variants, allowing for potential interchangeability if the mounting constraints are satisfied.

BLF6G27LS-40P,118BLF6G27LS-40P,118
$64.46
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