BLF6G27LS-40PGJ

BLF6G27LS-40PGJ

$55.20
  • Description:RF MOSFET LDMOS 28V CDFM4
  • Series:-

SKU:05d939b15a3e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:17.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:450 mA
  • Power - Output:12W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1121E
  • Supplier Device Package:CDFM4
  • Configuration:Dual, Common Source

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BLF6G27LS-40PGJ

Overview

The BLF6G27LS-40PGJ is a 40 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range, with suitability for 2300 MHz to 2400 MHz operation. It features a drain-source breakdown voltage of 65 V and operates at a typical drain voltage of 28 V. The device provides a typical power gain of 17.5 dB and achieves a drain efficiency of up to 37% under single carrier W-CDMA conditions. It utilizes an SOT1121E earless flanged ceramic package with gull-wing leads.

Feature Summary

  • Designed for broadband operation with low memory effects to support excellent pre-distortability
  • Optimized for Doherty applications through reduced output capacitance
  • Internally matched for simplified circuit integration
  • Integrated ESD protection compliant with RoHS directives

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz range
  • Single carrier IS-95 systems with pilot, paging, sync, and traffic channels

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead times and availability status. Ensure that the procurement channel is authorized to provide genuine components with valid traceability records. Confirm compliance with environmental directives such as RoHS before finalizing purchase orders.

Selection Notes

Select this component for designs requiring high ruggedness and thermal stability in Class-AB operation. Consider the internal matching network to reduce external component count. Evaluate the thermal resistance from junction to case (0.7 K/W) for adequate heat sinking solutions. Verify compatibility with the required impedance matching topology for the target frequency band.

Part Context

This part belongs to the Ampleon BLF6G27L series of power LDMOS transistors. It shares core electrical characteristics with the BLF6G27L-40P and BLF6G27LS-40P variants, differing primarily in the physical package configuration. The LS-40PG variant specifically denotes the earless flanged ceramic package with gull-wing leads (SOT1121E).

Replacement Considerations

The BLF6G27L-40P and BLF6G27LS-40P are electrically equivalent alternatives within the same datasheet. Substitution requires verification of mechanical fit due to differences in package outlines (SOT1121A vs SOT1121B vs SOT1121E). No other cross-manufacturer substitutes are documented in the official data.

BLF6G27LS-40PGJBLF6G27LS-40PGJ
$55.20
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