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The BLF6G27LS-40PGJ is a 40 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range, with suitability for 2300 MHz to 2400 MHz operation. It features a drain-source breakdown voltage of 65 V and operates at a typical drain voltage of 28 V. The device provides a typical power gain of 17.5 dB and achieves a drain efficiency of up to 37% under single carrier W-CDMA conditions. It utilizes an SOT1121E earless flanged ceramic package with gull-wing leads.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm lead times and availability status. Ensure that the procurement channel is authorized to provide genuine components with valid traceability records. Confirm compliance with environmental directives such as RoHS before finalizing purchase orders.
Select this component for designs requiring high ruggedness and thermal stability in Class-AB operation. Consider the internal matching network to reduce external component count. Evaluate the thermal resistance from junction to case (0.7 K/W) for adequate heat sinking solutions. Verify compatibility with the required impedance matching topology for the target frequency band.
This part belongs to the Ampleon BLF6G27L series of power LDMOS transistors. It shares core electrical characteristics with the BLF6G27L-40P and BLF6G27LS-40P variants, differing primarily in the physical package configuration. The LS-40PG variant specifically denotes the earless flanged ceramic package with gull-wing leads (SOT1121E).
The BLF6G27L-40P and BLF6G27LS-40P are electrically equivalent alternatives within the same datasheet. Substitution requires verification of mechanical fit due to differences in package outlines (SOT1121A vs SOT1121B vs SOT1121E). No other cross-manufacturer substitutes are documented in the official data.