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The BLF6G27LS-75,112 is a radio frequency power transistor manufactured by Ampleon USA Inc. It utilizes LDMOS technology and operates within the 2.5 GHz to 2.7 GHz frequency range. The device features a CDFM6 package designed for base mounting. Key electrical parameters include a drain-source breakdown voltage of 65 V and a rated test voltage of 28 V. The component delivers an output power of 25 W with a gain of 17 dB at a continuous drain current of 900 mA.
Verify the specific suffix '112' against official Ampleon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing thermal management solutions due to the CDFM6 base-mount form factor. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before integration into regulated products.
Select this component when designing circuits requiring 25 W output power in the 2.5–2.7 GHz spectrum. The 65 V breakdown voltage supports standard 28 V supply rails common in RF amplifier designs. Evaluate the CDFM6 package dimensions for PCB layout constraints and ensure adequate heat sinking capabilities are integrated into the system architecture.
This part belongs to the BLF8G27LS family of LDMOS transistors from Ampleon. While sharing similar frequency ranges and technologies, variations exist in power handling and voltage ratings across the series. The BLF6G27LS-75 variant specifically targets mid-power applications within the UHF band, distinct from higher-power counterparts like the BLF8G27LS-100V.
No official substitute part numbers are documented for this specific model. Engineers should evaluate components within the same BLF8G27LS family or comparable LDMOS devices from other manufacturers only after verifying pinout compatibility, thermal resistance values, and S-parameter characteristics.