BLF6G38LS-100,112

Overview

The BLF6G38-10 is a 10 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3600 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 2 W at a typical power gain of 14 dB and drain efficiency of 20%. The device features a maximum drain-source breakdown voltage of 65 V, a junction-to-case thermal resistance of 4.0 K/W, and a gate-source threshold voltage ranging from 1.4 V to 2.4 V. It is housed in an earless flanged ceramic package (SOT975B) and includes integrated ESD protection.

Feature Summary

• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Designed for broadband operation

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 3400 MHz to 3600 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and lead status. Confirm RoHS compliance requirements match Directive 2002/95/EC standards. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and unpacking.

Selection Notes

Select this component for WiMAX and N-CDMA base station designs requiring high linearity and efficiency in the 3.4 GHz to 3.6 GHz band. Evaluate thermal management capabilities given the 4.0 K/W junction-to-case resistance. Verify input and output impedance matching networks against the provided test circuit data for optimal performance.

Part Context

This device belongs to the Ampleon WiMAX power LDMOS transistor family. It is specifically engineered for wireless communications infrastructure operating within the WCS band. The product data sheet defines its electrical characteristics and application guidelines for production environments.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other RF MOSFETs without verifying pinout, thermal resistance, and impedance matching requirements.