BLF7G10LS-250

BLF7G10LS-250

  • Description:RF MOSFET LDMOS 30V SOT502B
  • Series:-

SKU:0cf25786316f Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:869MHz ~ 960MHz
  • Gain:19.5dB
  • Voltage - Test:30 V
  • Current Rating (Amps):5µA
  • Noise Figure:-
  • Current - Test:1.8 A
  • Power - Output:250W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLF7G10LS-250

Overview

The BLF7G10LS-250 is a 250 W LDMOS power transistor designed for base station applications in the 869 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 30 V and quiescent current of 1800 mA, delivering 60 W average output power per carrier in 2-carrier W-CDMA configurations. The device features a maximum drain-source breakdown voltage of 65 V and junction temperature limit of 200 °C. It utilizes an earless flanged ceramic SOT502B package with integrated ESD protection and internal matching for simplified circuit design.

Feature Summary

  • Designed for broadband operation across the 869 MHz to 960 MHz spectrum
  • Lower output capacitance optimized for improved performance in Doherty amplifier architectures
  • Low memory effects engineered to facilitate excellent pre-distortability
  • Internally matched input and output circuits to simplify RF design implementation

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications within the 869 MHz to 960 MHz band
  • Common source class-AB production test circuits

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Ensure procurement channels provide valid traceability for RoHS Directive 2002/95/EC compliance. Confirm that the supplied component matches the SOT502B earless flanged ceramic package specification required for the intended thermal and mechanical integration.

Selection Notes

Select this component for high-efficiency linear amplification in cellular infrastructure requiring robust ruggedness against load mismatches up to 10:1 VSWR. Evaluate thermal management requirements based on the 0.38 K/W junction-to-case thermal resistance. Consider the internal matching characteristics when designing impedance networks for the target operating frequency band.

Part Context

This part belongs to the BLF7G10L(S)-250 series from Ampleon, specifically utilizing the SOT502B earless flanged ceramic package. It serves as a high-power solution for wideband code division multiple access (W-CDMA) infrastructure, offering a balance of high output power and linearity suitable for modern multi-carrier base station deployments.

Replacement Considerations

The BLF7G10L-250 is the flanged ceramic package equivalent within the same series. Verify pinout compatibility and thermal interface requirements when substituting between the SOT502A and SOT502B variants. No other direct cross-model substitutes are documented in the official datasheet.

BLF7G10LS-250BLF7G10LS-250

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