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The BLF7G10LS-250 is a 250 W LDMOS power transistor designed for base station applications in the 869 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 30 V and quiescent current of 1800 mA, delivering 60 W average output power per carrier in 2-carrier W-CDMA configurations. The device features a maximum drain-source breakdown voltage of 65 V and junction temperature limit of 200 °C. It utilizes an earless flanged ceramic SOT502B package with integrated ESD protection and internal matching for simplified circuit design.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Ensure procurement channels provide valid traceability for RoHS Directive 2002/95/EC compliance. Confirm that the supplied component matches the SOT502B earless flanged ceramic package specification required for the intended thermal and mechanical integration.
Select this component for high-efficiency linear amplification in cellular infrastructure requiring robust ruggedness against load mismatches up to 10:1 VSWR. Evaluate thermal management requirements based on the 0.38 K/W junction-to-case thermal resistance. Consider the internal matching characteristics when designing impedance networks for the target operating frequency band.
This part belongs to the BLF7G10L(S)-250 series from Ampleon, specifically utilizing the SOT502B earless flanged ceramic package. It serves as a high-power solution for wideband code division multiple access (W-CDMA) infrastructure, offering a balance of high output power and linearity suitable for modern multi-carrier base station deployments.
The BLF7G10L-250 is the flanged ceramic package equivalent within the same series. Verify pinout compatibility and thermal interface requirements when substituting between the SOT502A and SOT502B variants. No other direct cross-model substitutes are documented in the official datasheet.