BLF7G10LS-250,118

Overview

The BLF7G10LS-250 is a 250 W LDMOS power transistor designed for base station applications in the 869 MHz to 960 MHz frequency range. It operates with a drain-source voltage of 30 V and quiescent current of 1800 mA, delivering 60 W average output power. The device provides a typical power gain of 19.5 dB and drain efficiency up to 30.5% under two-carrier W-CDMA conditions. It features an earless flanged ceramic package (SOT502B) with integrated ESD protection and internal matching for input and output circuits.

Feature Summary

• Internally matched for ease of use
• Designed for low memory effects providing excellent pre-distortability
• Lower output capacitance for improved performance in Doherty applications
• Integrated ESD protection

Applications

• RF power amplifiers for W-CDMA base stations
• Multi carrier applications in the 869 MHz to 960 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variations and compliance status. Ensure that procurement channels provide valid traceability for this RF power component. Confirm RoHS Directive 2002/95/EC compliance through manufacturer certificates prior to integration into production environments.

Selection Notes

Select the BLF7G10LS-250 variant specifically when an earless flanged ceramic package (SOT502B) is required for the design. Verify thermal management capabilities against the junction-to-case thermal resistance of 0.38 K/W at Tcase = 80 °C. Ensure the application circuit supports the specified 30 V drain-source voltage and 1800 mA quiescent current requirements for optimal performance.

Part Context

This component belongs to the BLF7G10L-250 family from Ampleon. The LS suffix denotes the SOT502B earless flanged ceramic package, distinguishing it from the standard SOT502A flanged package with mounting holes found in the BLF7G10L-250 variant. Both share identical electrical specifications and are intended for broadband RF power amplifier designs.

Replacement Considerations

The BLF7G10L-250 serves as a direct functional substitute if the mechanical footprint allows for the SOT502A package with mounting holes. Verify PCB layout compatibility regarding lead positions and thermal dissipation paths before substituting between the SOT502A and SOT502B package variants.

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under CW conditions of 200 W at 920 MHz to 960 MHz.

Is the BLF7G10LS-250 suitable for automotive applications?

No, unless expressly stated otherwise, this product is not automotive qualified and is not suitable for automotive equipment or applications.

What is the typical drain efficiency at 60 W output power?

The typical drain efficiency is 30.5% at 60 W average output power under two-carrier W-CDMA test conditions.