SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF7G15LS-300P is a 300 W LDMOS power transistor designed for base station applications operating between 1450 MHz and 1550 MHz. It features an earless flanged balanced ceramic package (SOT539B) with four leads. The device operates at a drain-source voltage of 28 V with a typical quiescent current of 2600 mA, delivering 85 W average output power in class-AB operation. Key electrical parameters include a drain-source breakdown voltage of 65 V, forward transconductance of 16.2 S, and thermal resistance from junction to case of 0.21 K/W.
Verify the component against the official Ampleon datasheet specifications before integration. Confirm that the ordering suffix matches the required package version. Ensure compliance with Directive 2002/95/EC regarding hazardous substances if applicable to your specific manufacturing requirements.
Select this component for broadband operations requiring high efficiency and low thermal resistance. Consider its suitability for Doherty amplifier configurations due to optimized output capacitance. Verify that the application environment supports the specified junction temperature limits and load mismatch ruggedness conditions.
This part belongs to the BLF7G series of LDMOS power transistors manufactured by Ampleon. It utilizes the SOT539B earless flanged balanced ceramic package. The device is specifically engineered for wideband code division multiple access (W-CDMA) infrastructure, offering robust performance in multi-carrier environments.
No official substitute part numbers are documented in the provided data sheet. When evaluating alternatives, ensure compatibility with the SOT539B package dimensions and verify that the replacement meets the 1450 MHz to 1550 MHz operational bandwidth and 28 V drain-source voltage requirements.