BLF7G15LS-300P,118

BLF7G15LS-300P,118

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-

SKU:fa8eceb960cf Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.47GHz ~ 1.51GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):45A
  • Noise Figure:-
  • Current - Test:2.6 A
  • Power - Output:85W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-539B
  • Supplier Device Package:SOT539B
  • Configuration:Dual, Common Source

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BLF7G15LS-300P,118

Overview

The BLF7G15LS-300P is a 300 W LDMOS power transistor designed for base station applications operating between 1450 MHz and 1550 MHz. It features an earless flanged balanced ceramic package (SOT539B) with four leads. The device operates at a drain-source voltage of 28 V with a typical quiescent current of 2600 mA, delivering 85 W average output power in class-AB operation. Key electrical parameters include a drain-source breakdown voltage of 65 V, forward transconductance of 16.2 S, and thermal resistance from junction to case of 0.21 K/W.

Feature Summary

  • Internally matched for ease of use
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent pre-distortability
  • Integrated ESD protection

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 1450 MHz to 1550 MHz frequency range

Procurement Notes

Verify the component against the official Ampleon datasheet specifications before integration. Confirm that the ordering suffix matches the required package version. Ensure compliance with Directive 2002/95/EC regarding hazardous substances if applicable to your specific manufacturing requirements.

Selection Notes

Select this component for broadband operations requiring high efficiency and low thermal resistance. Consider its suitability for Doherty amplifier configurations due to optimized output capacitance. Verify that the application environment supports the specified junction temperature limits and load mismatch ruggedness conditions.

Part Context

This part belongs to the BLF7G series of LDMOS power transistors manufactured by Ampleon. It utilizes the SOT539B earless flanged balanced ceramic package. The device is specifically engineered for wideband code division multiple access (W-CDMA) infrastructure, offering robust performance in multi-carrier environments.

Replacement Considerations

No official substitute part numbers are documented in the provided data sheet. When evaluating alternatives, ensure compatibility with the SOT539B package dimensions and verify that the replacement meets the 1450 MHz to 1550 MHz operational bandwidth and 28 V drain-source voltage requirements.

BLF7G15LS-300P,118BLF7G15LS-300P,118

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