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The BLF7G20L-200 is a 200 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA. In a typical 2-carrier W-CDMA test circuit at Tcase = 25 °C, it delivers an average output power of 55 W with a power gain of 18 dB and a drain efficiency of 33%. The device features a thermal resistance from junction to case of 0.27 K/W and is housed in a flanged ceramic package (SOT502A).
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant. The standard designation corresponds to the SOT502A flanged ceramic package with mounting holes. Confirm RoHS compliance status and check for any recent product change notices or obsolescence announcements directly from Ampleon before finalizing procurement plans.
Select this component for wideband cellular infrastructure requiring high ruggedness and efficiency. Ensure the application design accommodates the specified 28 V supply and 1620 mA bias current. Verify that the host system provides adequate thermal management to maintain the junction temperature below the 225 °C absolute maximum rating during peak load conditions.
This part belongs to the BLF7G series of LDMOS power transistors manufactured by Ampleon USA Inc. The 'L' designation indicates a specific package configuration, while the '-200' suffix denotes the power handling class. It is functionally related to the BLF7G20LS-200, which utilizes the earless SOT502B package variant.
The BLF7G20LS-200 serves as a direct functional equivalent utilizing the SOT502B earless flanged package. When substituting, verify mechanical mounting hole alignment and lead spacing differences between the SOT502A and SOT502B outlines. Electrical parameters remain consistent, but physical integration requires checking the heatsink interface geometry.