BLF7G20LS-140P,112

Overview

The BLF7G20LS-140P,112 is a dual-element L-band silicon N-channel RF power MOSFET manufactured by Ampleon USA Inc. and distributed by NXP. It operates within the 1.8 to 2.0 GHz frequency range with a drain-source breakdown voltage of 65 V. The device utilizes an SOT1121B surface-mount package and is RoHS compliant. Designed for high-efficiency amplification, it supports continuous drain currents up to 36 A and delivers significant output power in the L-band spectrum.

Feature Summary

• Dual-element LDMOS architecture optimized for balanced RF performance
• Robust 65V drain-source breakdown voltage capability
• Surface-mount SOT1121B package design for efficient thermal management
• Compliant with RoHS environmental standards

Applications

• L-band radar systems
• Military communication transmitters
• Broadband signal amplification
• High-power RF generation modules

Procurement Notes

Verify manufacturer origin between Ampleon and NXP distributors. Confirm SOT1121B package integrity and RoHS compliance status. Request official datasheets for electrical parameter validation. Ensure supply chain authenticity through authorized channels only.

Selection Notes

Select this component for applications requiring stable L-band amplification with high voltage tolerance. Consider the dual-element configuration for improved linearity and power handling compared to single-device solutions. Evaluate thermal requirements based on the SOT1121B package constraints.

Part Context

This part belongs to the BLF7G series of RF power transistors designed for demanding broadcast and defense applications. It represents a transition from traditional discrete designs to integrated multi-element solutions for enhanced reliability and performance density in modern RF infrastructure.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.