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The BLF7G20LS-200 is a power LDMOS transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It delivers an average output power of 55 W with a drain efficiency of 33% and a power gain of 18 dB under two-carrier W-CDMA test conditions (PAR = 8.4 dB). The device features a low thermal resistance from junction to case of 0.27 K/W, ensuring excellent thermal stability. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA. The component is housed in an earless flanged ceramic package (SOT502B) and includes integrated ESD protection.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant. The BLF7G20LS-200 corresponds to the SOT502B earless flanged ceramic package. Ensure that procurement channels provide valid traceability and authenticity certificates consistent with Ampleon's distribution standards.
Select this component for wideband RF power amplifier designs requiring high ruggedness and efficiency in the 1805 MHz to 1990 MHz band. Consider the SOT502B package for mounting constraints where flange ears are not required. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance to maintain optimal operating temperatures during continuous wave or multi-carrier operations.
This part belongs to the BLF7G20L-200 series of power LDMOS transistors manufactured by Ampleon. The 'LS' designation specifically identifies the earless flanged ceramic package version (SOT502B), distinguishing it from the standard flanged variant (SOT502A). These devices are engineered for robust performance in cellular infrastructure environments.
The BLF7G20L-200 serves as the primary functional equivalent with a different package configuration (SOT502A). Direct substitution requires verifying mechanical fitment due to the presence or absence of flange ears. No other official substitute part numbers are documented in the provided datasheet.