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The BLF7G20LS-250P is a 250 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It operates with a drain-source voltage of 28 V and provides an average output power of 70 W in two-carrier W-CDMA mode. The device features a typical power gain of 18 dB, a drain efficiency of 35%, and an adjacent channel power ratio of -29.5 dBc. It utilizes the SOT539B earless flanged ceramic package and includes integrated ESD protection.
Verify the specific ordering suffix against official Ampleon documentation to confirm the exact package variant. The 'S' designation indicates the SOT539B earless flanged package. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the component meets the absolute maximum ratings defined in the product data sheet before finalizing orders.
Select this component for wideband RF power amplifier designs requiring high efficiency and ruggedness. The device supports class-AB operation with a junction temperature limit of 200 °C. Designers must account for the specified thermal resistance from junction to case when calculating heatsink requirements. Verify impedance matching networks using the provided load-pull data for optimal performance at target frequencies.
This part belongs to the BLF7G20L-250P series, which includes both flanged (SOT539A) and earless flanged (SOT539B) variants. The BLF7G20LS-250P specifically denotes the earless version intended for surface-mount or direct-flange mounting configurations without side ears. It serves as a high-power solution for cellular infrastructure within the specified UMTS band.
The BLF7G20L-250P is the primary functional equivalent within the same family, differing only in the mechanical package configuration (SOT539A vs. SOT539B). Substitution requires verification of mounting hole patterns and lead dimensions. No other cross-compatible models are documented in the official datasheet.