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The BLF7G20LS-90P,112 is an LDMOS power transistor manufactured by Ampleon USA Inc. Designed for broadband RF applications, it operates within the 869 MHz to 960 MHz frequency range. The device features a drain-source breakdown voltage of 65 V and a rated drain voltage of 28 V. It delivers a typical output power of 90 W with a gain of 17 dB at 900 MHz under Class AB biasing conditions. Packaged in SOT539A, this component is engineered for high efficiency and thermal stability in multi-carrier transmitter environments.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact mechanical dimensions and pin configurations. Ensure compatibility with existing PCB footprints and thermal management solutions before integration. Confirm RoHS compliance status through current datasheets.
Select this component for applications requiring stable 90 W output power in the 900 MHz band. Evaluate thermal impedance requirements carefully to maintain junction temperatures within safe operating limits during continuous wave operation. Consider bias network design for optimal linearity and efficiency trade-offs.
This part belongs to the Ampleon BLF7G series of LDMOS transistors. These devices are widely used in telecommunications infrastructure. The series emphasizes reliability and consistent performance across varying temperature conditions, supporting global mobile communication standards.
Direct cross-compatibility with other manufacturers' parts is not guaranteed due to unique internal matching networks. Review electrical parameters such as gain flatness and harmonic content when evaluating alternative components from the same product family or different vendors.