BLF7G21LS-160,112

BLF7G21LS-160,112

$84.08
  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-

SKU:8dc9a1cc4df4 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tube
  • Technology:LDMOS
  • Frequency:1.93GHz ~ 1.99GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):32.5A
  • Noise Figure:-
  • Current - Test:1.08 A
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Flange Mount
  • Package / Case:SOT-1121B
  • Supplier Device Package:LDMOST
  • Configuration:Dual, Common Source

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BLF7G21LS-160,112

Overview

The BLF7G21LS-160,112 is an LDMOS RF power transistor manufactured by Ampleon USA Inc. Designed for high-efficiency radio frequency applications, this component operates within the 869 MHz to 894 MHz frequency range. It delivers a typical output power of 160 W with a gain of 17 dB at a drain voltage of 28 V. The device features a low thermal resistance and is housed in a SOT539A surface-mount package, making it suitable for base station power amplifier designs requiring robust performance and reliability.

Feature Summary

  • High efficiency operation optimized for cellular base station power amplifiers
  • Low thermal resistance design for effective heat dissipation
  • Robust LDMOS technology ensuring stable performance under varying load conditions

Applications

  • W-CDMA base station power amplifiers
  • Multicarrier base station applications
  • Cellular infrastructure RF power modules

Procurement Notes

Verify the specific suffix 112 against official Ampleon documentation to confirm reel packaging specifications. Confirm current availability status as product lifecycles may change. Ensure compatibility with existing PCB footprints designated for the SOT539A package before procurement.

Selection Notes

Select this component for applications requiring 160 W output power in the 800 MHz band. Compare thermal management requirements against the datasheet limits. Ensure the driving circuit can provide sufficient gain and bias stability for optimal linearity and efficiency in multicarrier environments.

Part Context

This part belongs to the BLF7G series of LDMOS transistors from Ampleon. The series is characterized by high power density and efficiency, targeting modern cellular communication standards. The BLF7G21 variant specifically addresses the 800 MHz spectrum needs for wideband code division multiple access networks.

Replacement Considerations

Check for direct replacements within the BLF7G family such as the BLF7G21LS-160 without the suffix if packaging differences are acceptable. Verify pinout and thermal pad configurations match exactly. No other cross-manufacturer substitutes are officially confirmed.

BLF7G21LS-160,112BLF7G21LS-160,112
$84.08
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