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The BLF7G21LS-160P is a 160 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2050 MHz frequency range, with suitability for 1495 MHz to 1511 MHz. It operates at a drain-source voltage of 28 V and features a maximum drain current of 32.5 A. The device exhibits a thermal resistance from junction to case of 0.41 K/W and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. Packaged in the SOT1121B earless flanged ceramic format, it provides excellent ruggedness and high efficiency for multi-carrier RF power amplification.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package variant selection. Ensure compatibility with the SOT1121B earless flanged ceramic package dimensions during mechanical design. Confirm RoHS compliance status through the latest product data sheet revision before finalizing procurement specifications.
Select this component for designs requiring high power output in the 1800 MHz to 2050 MHz spectrum. Evaluate thermal management requirements based on the 0.41 K/W junction-to-case resistance. Consider the internal matching network when designing input and output impedance circuits. Verify that the application environment supports the specified junction temperature limits.
This part belongs to the BLF7G21L/BLF7G21LS series of power LDMOS transistors manufactured by Ampleon. The LS suffix denotes the SOT1121B earless flanged ceramic package, distinguishing it from the standard flanged version. These devices are engineered specifically for wireless communication infrastructure requiring robust performance in multi-carrier environments.
Consult the official Ampleon datasheet for confirmed substitute part numbers. Cross-compatibility should be verified against pinout configurations and thermal characteristics. Ensure any replacement maintains the required bandwidth and power handling capabilities for the specific base station application.