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The BLF7G22L-130 is a 130 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 65 V and a gate-source voltage up to +13 V. The device delivers an average output power of 30 W under typical two-carrier W-CDMA conditions, achieving a power gain of 18.5 dB and a drain efficiency of 32%. It features a junction-to-case thermal resistance of 0.35 K/W and supports a maximum junction temperature of 225 °C.
Verify the specific package variant required for the design, as the BLF7G22L-130 corresponds to the SOT502A flanged ceramic package with mounting holes. Confirm that the sourcing channel provides the official Ampleon datasheet to ensure compliance with RoHS directives and absolute maximum ratings before finalizing procurement orders.
Select this component when designing RF power stages for W-CDMA base stations operating between 2000 MHz and 2200 MHz. Ensure the thermal management system can maintain the case temperature within limits to support the specified 130 W CW output capability. Verify that the input and output impedance matching networks align with the provided typical impedance data for optimal gain and efficiency performance.
This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon. The series includes variants such as the BLF7G22LS-130, which utilizes the SOT502B earless flanged package. These devices are engineered specifically for high-efficiency radio frequency power amplification in telecommunications infrastructure.
The BLF7G22LS-130 serves as a direct functional equivalent with a different mechanical footprint (SOT502B). When replacing the BLF7G22L-130, verify that the PCB layout accommodates the absence of mounting holes if switching to the LS variant. Electrical parameters remain consistent, but mechanical integration requires specific adapter or layout adjustments.