SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF7G22L-130 is a 130 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 950 mA. The device provides typical power gain of 18.5 dB, drain efficiency of 32%, and an adjacent channel power ratio (ACPR) of -32 dBc under two-carrier W-CDMA conditions. It features low thermal resistance of 0.35 K/W and withstands VSWR up to 10:1.
Verify the specific package variant required for the design, as the BLF7G22L-130 corresponds to the SOT502A flanged ceramic package with mounting holes, while the BLF7G22LS-130 uses the SOT502B earless flanged package. Confirm RoHS compliance status and check for any product change notices or obsolescence updates directly from Ampleon before finalizing procurement plans.
Select this component for wideband RF power amplifier designs requiring high linearity and efficiency in the 2 GHz band. Ensure the application supports class-AB operation at 28 V. Consider the internal matching network which simplifies circuit design but requires adherence to the specified impedance values for optimal performance.
This part belongs to the BLF7G22 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants like the BLF7G22LS-130, which differs primarily in the physical package configuration (earless vs. flanged). These devices are engineered for telecommunications infrastructure, specifically targeting cellular base station deployments.
The BLF7G22LS-130 serves as a direct functional equivalent with a different package outline (SOT502B). No other official substitute part numbers are documented in the provided datasheet. Verify mechanical fit and thermal interface requirements when considering alternative packages.