BLF7G22L-200,112

BLF7G22L-200,112

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-

SKU:ef01653d7f43 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tube
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:18.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.62 A
  • Power - Output:55W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

Download product information

BLF7G22L-200,112

Overview

The BLF7G22L-200 is a 200 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA. The device provides an average output power of 55 W per carrier in two-carrier W-CDMA mode, achieving a typical power gain of 18.5 dB and a drain efficiency of 31%. It features a flanged ceramic package (SOT502A) with internal matching and integrated ESD protection.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Designed for low memory effects providing excellent pre-distortability

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 2110 MHz to 2170 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant. The standard BLF7G22L-200 designation corresponds to the SOT502A flanged ceramic package with mounting holes. Confirm RoHS compliance status directly with the supplier or manufacturer before procurement.

Selection Notes

Select this component for high-power RF amplification in cellular infrastructure operating within the specified frequency band. Ensure the thermal management system can handle the junction-to-case thermal resistance of 0.26 K/W at the required power levels. Verify that the load impedance matches the provided typical impedance data for optimal performance.

Part Context

This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF7G22LS-200, which utilizes the SOT502B earless flanged package. These devices are engineered specifically for demanding wireless communication base station environments requiring high linearity and ruggedness.

Replacement Considerations

The BLF7G22LS-200 serves as a direct package alternative using the SOT502B outline. When replacing components, verify that the new device matches the original pinout configuration and thermal characteristics. Consult the manufacturer for any updated versions or cross-reference lists to ensure compatibility with existing circuit designs.

BLF7G22L-200,112BLF7G22L-200,112

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