BLF7G22LS-130,112

Overview

The BLF7G22LS-130,112 is a 130 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 950 mA. Typical performance at Tcase = 25 °C includes an average output power of 30 W, a power gain of 18.5 dB, and a drain efficiency of 32% under two-carrier W-CDMA conditions. The device features a thermal resistance from junction to case of 0.35 K/W and is housed in an SOT502B earless flanged ceramic package.

Feature Summary

• Designed for broadband operation across the 2000 MHz to 2200 MHz spectrum
• Lower output capacitance optimized for improved Doherty amplifier performance
• Low memory effects supporting excellent digital pre-distortion capability
• Internally matched for simplified circuit integration

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications within the 2000 MHz to 2200 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant. The BLF7G22LS-130 designation corresponds to the SOT502B earless flanged ceramic package. Ensure that procurement channels provide valid traceability and authenticity certificates consistent with Ampleon's distribution requirements.

Selection Notes

Select this component for designs requiring high ruggedness and low Rth for thermal stability. The internal matching simplifies impedance networks, while the specific output capacitance characteristics make it suitable for Doherty architectures. Confirm that the application environment supports the specified junction temperature limits and complies with RoHS directives.

Part Context

This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon. The 'LS' suffix indicates the earless flanged ceramic package (SOT502B), distinguishing it from the standard flanged version (SOT502A). These devices are engineered specifically for cellular infrastructure, offering a balance of high power density and linearity for modern modulation schemes.

Replacement Considerations

Consult the official datasheet for cross-reference information. Direct replacements must match the 130 W power rating, 28 V operating voltage, and SOT502B package dimensions. Verify that any substitute component maintains equivalent thermal resistance and impedance characteristics to ensure circuit compatibility without redesign.