BLF7G22LS-160,118

Overview

The BLF7G22LS-160,118 is an LDMOS power transistor manufactured by Ampleon USA Inc. Designed for high-efficiency radio frequency amplification, this component operates within the 2110 MHz to 2170 MHz frequency range. It is specifically engineered for W-CDMA base station applications and multi-carrier systems. The device utilizes a robust package structure to manage thermal dissipation effectively during continuous RF operation.

Feature Summary

• Optimized for high efficiency in cellular base station power amplification
• Engineered for stable performance in multi-carrier W-CDMA environments
• Features low thermal resistance for effective heat management

Applications

• W-CDMA base station power amplifiers
• Multi-carrier cellular infrastructure
• RF power amplification in telecommunications equipment

Procurement Notes

Verify the specific datasheet revision and electrical characteristics directly from Ampleon official documentation before integration. Confirm that the BLF7G22LS-160,118 designation matches the required voltage and current specifications for the target circuit design. Ensure compliance with RoHS standards as indicated in manufacturer records.

Selection Notes

Select this component when designing for W-CDMA bands requiring reliable multi-carrier performance. Evaluate thermal management requirements against the device's packaging capabilities. Compare gain and linearity parameters with alternative models in the BLF7G series to ensure compatibility with existing amplifier topologies.

Part Context

This part belongs to the BLF7G series of LDMOS transistors from Ampleon. The series is widely used in mobile communication infrastructure. The suffix indicates specific packaging or tape-and-reel configuration details defined by the manufacturer.