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The BLF7G22LS-200,112 is a 200 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA. The device delivers an average output power of 55 W with a typical power gain of 18.5 dB and a drain efficiency of 31% under two-carrier W-CDMA conditions. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 18.9 S. The thermal resistance from junction to case is typically 0.26 K/W.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status as stated in the product data sheet. Ensure handling procedures adhere to electrostatic discharge precautions during installation.
Select this component for high-efficiency RF power amplifier designs requiring robust ruggedness. Verify that the application environment supports the specified operating temperature range and thermal management requirements. Ensure impedance matching networks align with the provided typical impedance data for optimal performance.
This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon. The LS variant specifically denotes an earless flanged ceramic package (SOT502B), distinguishing it from the standard flanged version. This series is engineered for demanding cellular infrastructure environments.
Consult the official Ampleon datasheet for confirmed substitute part numbers. Cross-compatibility should be verified based on pinout, package dimensions, and electrical specifications. Do not assume interchangeability without validating technical parameters against the target design requirements.