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The BLF7G22LS-200,118 is a 200 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA. The device delivers an average output power of 55 W with a typical power gain of 18.5 dB and a drain efficiency of 31% under two-carrier W-CDMA conditions. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 18.9 S. The thermal resistance from junction to case is typically 0.26 K/W.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration and compliance status. Confirm that the component meets Directive 2002/95/EC regarding Restriction of Hazardous Substances requirements before integration into final designs.
Select this component for high-efficiency RF power amplifier designs requiring robust ruggedness and low memory effects. Ensure the application circuit supports the specified 28 V drain-source voltage and provides adequate thermal management to maintain junction temperatures within the 200 °C limit during operation.
This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon. The LS variant utilizes the SOT502B earless flanged ceramic package, distinguishing it from the standard flanged version. It is engineered specifically for demanding wireless communication infrastructure environments.
Consult official Ampleon documentation for confirmed substitute part numbers. Verify pinout compatibility between SOT502A and SOT502B packages if considering alternative variants within the same family.