BLF7G22LS-200,118

BLF7G22LS-200,118

$68.22
  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:3b5467412201 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:18.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.62 A
  • Power - Output:55W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLF7G22LS-200,118

Overview

The BLF7G22LS-200,118 is a 200 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA. The device delivers an average output power of 55 W with a typical power gain of 18.5 dB and a drain efficiency of 31% under two-carrier W-CDMA conditions. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 18.9 S. The thermal resistance from junction to case is typically 0.26 K/W.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Low Rth providing excellent thermal stability
  • Designed for low memory effects providing excellent pre-distortability

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 2110 MHz to 2170 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration and compliance status. Confirm that the component meets Directive 2002/95/EC regarding Restriction of Hazardous Substances requirements before integration into final designs.

Selection Notes

Select this component for high-efficiency RF power amplifier designs requiring robust ruggedness and low memory effects. Ensure the application circuit supports the specified 28 V drain-source voltage and provides adequate thermal management to maintain junction temperatures within the 200 °C limit during operation.

Part Context

This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon. The LS variant utilizes the SOT502B earless flanged ceramic package, distinguishing it from the standard flanged version. It is engineered specifically for demanding wireless communication infrastructure environments.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Verify pinout compatibility between SOT502A and SOT502B packages if considering alternative variants within the same family.

BLF7G22LS-200,118BLF7G22LS-200,118
$68.22
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