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The Ampleon BLF7G22LS-250P,112 is an LDMOS power transistor designed for high-efficiency RF amplification. It operates within the 2110 MHz to 2170 MHz frequency range, targeting W-CDMA base station and multi-carrier applications. Key electrical parameters include a drain-source breakdown voltage of 65 V and a forward transconductance of 13.7 S. The device features a low on-resistance of 0.081 Ω and a gate-source threshold voltage ranging from 1.5 V to 2.3 V. Packaged in SOT539A, it supports a maximum drain current between 28 A and 34.2 A, ensuring robust performance in demanding cellular infrastructure environments.
Verify the complete part number including the suffix when sourcing components. Confirm that the specific variant matches the required package type and electrical specifications for your design. Ensure compatibility with existing thermal management solutions and drive circuitry before integration into production systems.
Select this component for designs requiring efficient amplification in the 2 GHz range. Consider the 65 V breakdown voltage and 13.7 S transconductance when designing matching networks. Evaluate the SOT539A package constraints for PCB layout and thermal dissipation requirements relative to the expected power output levels.
This device belongs to Ampleon's portfolio of LDMOS power transistors engineered for telecommunications infrastructure. It represents a specialized solution for cellular base stations, focusing on efficiency and linearity in multi-carrier scenarios. The product line emphasizes reliability and thermal stability for continuous operation in critical communication networks.
Consult official Ampleon documentation for verified substitute part numbers. Cross-compatibility should be validated against pinout, thermal characteristics, and electrical limits. Do not assume interchangeability with other models without confirming datasheet alignment.