BLF7G24L-160P,112

Overview

The BLF7G24L-160P,112 is a high-power LDMOS radio frequency (RF) transistor manufactured by Ampleon USA Inc. Designed for broadband applications, this component operates within the 1694 to 1938 MHz frequency range. It utilizes a lead-free surface-mount package suitable for automated assembly processes. The device is engineered to deliver substantial output power with high efficiency and linearity, making it appropriate for demanding RF amplification tasks in communication infrastructure.

Feature Summary

• Broadband operational capability across specified VHF/UHF bands
• High power-added efficiency for energy-conscious designs
• Robust thermal performance via optimized leadframe construction
• Lead-free compliant packaging for environmental standards

Applications

• Base station power amplification
• Broadband RF signal generation
• Military communication systems

Procurement Notes

Verify the specific suffix '112' against the manufacturer's official documentation to confirm lead-free status and tape-and-reel specifications. Ensure compatibility with RoHS directives prior to integration. Cross-reference the exact part number with authorized distributors to avoid counterfeit components. Confirm that the ordering code matches the intended package variant and material composition requirements for your manufacturing process.

Selection Notes

Evaluate the thermal resistance characteristics of the package to ensure adequate heat dissipation for the target power levels. Consider the impedance matching network complexity required for the broadband frequency range. Assess the gain flatness across the operating band to determine suitability for linear amplification needs. Verify that the drive power requirements align with the preceding stage capabilities in the RF chain.

Part Context

This component belongs to the BLF7G series of LDMOS transistors from Ampleon, which are widely recognized for their reliability in high-power RF applications. The series is designed to meet the stringent demands of modern wireless infrastructure, offering a balance of power density and efficiency. The specific model integrates advanced semiconductor technology to support continuous wave and pulsed operation modes.

Replacement Considerations

Consult Ampleon's official substitution guide for direct replacements. Generic cross-compatibility should be avoided due to precise impedance and thermal requirements. If an exact match is unavailable, verify pinout compatibility and thermal pad dimensions before considering alternative packages.