SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF7G27L-140 is a 140 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It supports single carrier IS-95 and 3GPP test model 1 (64 DPCH) modes. Key electrical parameters include a drain-source voltage of 65 V, typical power gain of 16.5 dB, and drain efficiency up to 27% under single carrier W-CDMA conditions. The device features a thermal resistance from junction to case of 0.28 K/W at Tcase = 80 °C and PL = 125 W. It is housed in a flanged ceramic package with two mounting holes and two leads.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status as per Directive 2002/95/EC during procurement. Cross-reference the part number with official Ampleon documentation to validate manufacturing origin and revision history before finalizing purchase orders.
Select this component for high-power RF amplifier designs operating between 2500 MHz and 2700 MHz. Ensure the application circuit can maintain the case temperature within specified limits to utilize the 0.28 K/W thermal resistance effectively. Verify that the load mismatch conditions do not exceed the VSWR = 10:1 ruggedness rating during operation.
This device belongs to the BLF7G series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for cellular infrastructure, offering a balance of high output power and efficiency. The product line includes variants such as the BLF7G27LS-140, which differs primarily in package configuration while maintaining similar electrical performance characteristics for base station deployments.
The BLF7G27LS-140 is a related variant within the same datasheet, differing mainly in package style (earless flanged SOT502B vs. flanged SOT502A). Direct substitution requires verifying mechanical fit and mounting hole alignment. No other cross-manufacturer substitutes are confirmed in the provided documentation.