BLF7G27L-140,118

BLF7G27L-140,118

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-

SKU:3d54e2e3cc2a Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):28A
  • Noise Figure:-
  • Current - Test:1.3 A
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLF7G27L-140,118

Overview

The BLF7G27L-140 is a 140 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It supports single carrier IS-95 and 3GPP test model 1 (64 DPCH) modes. Key electrical parameters include a drain-source voltage of 65 V, typical power gain of 16.5 dB, and drain efficiency up to 27% under single carrier W-CDMA conditions. The device features a thermal resistance from junction to case of 0.28 K/W at Tcase = 80 °C and PL = 125 W. It is housed in a flanged ceramic package with two mounting holes and two leads.

Feature Summary

  • Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
  • Low thermal resistance providing excellent thermal stability
  • Designed for low memory effects supporting digital pre-distortion
  • Internally matched for ease of use

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 2500 MHz to 2700 MHz range
  • Single carrier IS-95 systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package variant selection. Confirm RoHS compliance status as per Directive 2002/95/EC during procurement. Cross-reference the part number with official Ampleon documentation to validate manufacturing origin and revision history before finalizing purchase orders.

Selection Notes

Select this component for high-power RF amplifier designs operating between 2500 MHz and 2700 MHz. Ensure the application circuit can maintain the case temperature within specified limits to utilize the 0.28 K/W thermal resistance effectively. Verify that the load mismatch conditions do not exceed the VSWR = 10:1 ruggedness rating during operation.

Part Context

This device belongs to the BLF7G series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for cellular infrastructure, offering a balance of high output power and efficiency. The product line includes variants such as the BLF7G27LS-140, which differs primarily in package configuration while maintaining similar electrical performance characteristics for base station deployments.

Replacement Considerations

The BLF7G27LS-140 is a related variant within the same datasheet, differing mainly in package style (earless flanged SOT502B vs. flanged SOT502A). Direct substitution requires verifying mechanical fit and mounting hole alignment. No other cross-manufacturer substitutes are confirmed in the provided documentation.

BLF7G27L-140,118BLF7G27L-140,118

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