BLF7G27L-90P,118

Overview

The BLF7G27L-90P is a 90 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It supports single carrier IS-95 with PAR = 9.7 dB and 3GPP test model 1 (64 DPCH) with PAR = 7.2 dB. Typical performance at Tcase = 25 °C, VDS = 28 V, and IDq = 720 mA includes an average output power of 16 W with 18.5 dB gain and 29% drain efficiency for IS-95, and 25 W with 18.5 dB gain and 35% efficiency for single carrier W-CDMA. The device features a maximum drain-source voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.4 K/W.

Feature Summary

• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• Lower output capacitance optimized for improved Doherty application performance
• Designed for low memory effects to provide excellent pre-distortability
• Internally matched for ease of use and integrated ESD protection

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 2500 MHz to 2700 MHz frequency range
• Single carrier IS-95 systems with pilot, paging, sync, and traffic channels

Procurement Notes

Verify the specific package variant required for the design, as the BLF7G27L-90P corresponds to the SOT1121A flanged ceramic package with mounting holes, while the BLF7G27LS-90P uses the SOT1121B earless flanged package. Confirm RoHS compliance status and check the latest Ampleon product data sheet for any updates to the ordering information or pinning configuration before finalizing procurement.

Selection Notes

Select this component for broadband operations between 2500 MHz and 2700 MHz where high efficiency and low memory effects are critical. Ensure the thermal management system can maintain the case temperature within limits to support the specified 90 W output power. Verify that the load mismatch conditions do not exceed the rated VSWR of 10:1 to prevent permanent damage during class-AB operation.

Part Context

This part belongs to the BLF7G27 series of power LDMOS transistors manufactured by Ampleon. The 'L' suffix indicates the standard flanged ceramic package (SOT1121A), whereas the 'LS' variant denotes an earless version (SOT1121B). Both variants share identical electrical characteristics and are intended for wireless infrastructure applications requiring robust RF performance.

Replacement Considerations

The BLF7G27LS-90P serves as a direct physical alternative if an earless flanged package is preferred, sharing the same electrical specifications. No other official substitute part numbers are documented in the provided datasheet. Cross-compatibility with other manufacturers' devices requires independent verification of pinout, thermal resistance, and RF parameters.