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The BLF7G27LS-100,118 is a 100 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 900 mA. The device delivers an average output power of 25 W in single carrier W-CDMA mode and 20 W in IS-95 mode. Typical power gain is 17.5 dB and 18 dB respectively, with drain efficiencies of 30% and 28%. The component utilizes a flanged ceramic package (SOT502B) with two leads and features internal matching and ESD protection.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package variant selection. Confirm RoHS compliance status as required by local regulations. Check product status updates on the manufacturer website, as availability may change. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet.
Select this component for high-efficiency RF power amplification in cellular base stations operating within the S-band. Consider the SOT502B earless flanged package for mounting constraints. Evaluate thermal management capabilities based on the junction-to-case thermal resistance. Verify compatibility with existing biasing networks for Class-AB operation at 28 V.
This part belongs to the BLF7G27L-100 family from Ampleon. The 'LS' designation indicates the earless flanged ceramic package version (SOT502B), distinct from the standard flanged version (SOT502A). Both variants share identical electrical characteristics and are intended for the same base station amplifier applications.
The BLF7G27L-100 serves as the primary alternative within the same family, differing only in the presence of mounting ears on the flange (SOT502A vs SOT502B). Cross-compatibility requires verification of mechanical mounting hole alignment and lead configuration. No other direct substitutes are officially documented.