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The BLF7G27LS-150P is a 150 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features a drain-source voltage of 65 V and a junction temperature rating up to 225 °C. In single carrier IS-95 operation at 28 V, it delivers 30 W output power with 16.5 dB gain and 26% efficiency. For single carrier W-CDMA, it provides 45 W output power with identical gain and 31% efficiency. The device utilizes an earless flanged balanced ceramic package (SOT539B) with four leads.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as required by local regulations. Check for any recent revision updates that may affect pinning or electrical characteristics before finalizing procurement specifications.
Select this component for high-power RF applications requiring robust performance in the 2.5 GHz to 2.7 GHz bands. Ensure the design accommodates the 65 V drain-source voltage limit and the 225 °C maximum junction temperature. Verify that the application circuit supports the necessary bias conditions for Class-AB operation to achieve specified efficiency levels.
This part belongs to the BLF7G27L/BLF7G27LS series from Ampleon. It shares core electrical specifications with the flanged variant BLF7G27L-150P but differs in physical packaging. The LS designation indicates an earless flanged balanced ceramic package (SOT539B), distinguishing it from the standard flanged version.
The BLF7G27L-150P serves as a direct functional substitute within the same product family. Both devices share identical electrical parameters and performance metrics. Selection between them depends primarily on mechanical mounting requirements and available PCB space for the respective package styles.