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The Ampleon BLF881,112 is a UHF power LDMOS transistor designed for broadcast and industrial applications. It delivers 140 W from HF to 1 GHz. The device features integrated ESD protection and excellent ruggedness. Key electrical parameters include a drain-source voltage of 50 V and a quiescent drain current of 0.5 A. At 860 MHz in Class AB operation, it achieves 140 W peak envelope power with 21 dB gain and 49% efficiency. In DVB-T mode at 858 MHz, it provides 33 W average output power with 21 dB gain and 34% efficiency. The component is housed in a flanged SOT467C ceramic package.
Verify the specific ordering suffix against official documentation to ensure correct package variant selection. Confirm RoHS compliance status as required by project specifications. Validate that the procurement channel sources directly from authorized distributors to guarantee authenticity. Ensure handling procedures account for the device's sensitivity to electrostatic discharge during transport and assembly.
Select this component for designs requiring broadband performance across the HF to 1 GHz range. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate the device's ruggedness capabilities if the application involves potential load mismatches. Verify compatibility with the intended biasing conditions and operating frequency bands.
The BLF881 belongs to Ampleon's portfolio of UHF power LDMOS transistors. It is specifically engineered for high-efficiency broadband applications. The device complements other RF power solutions by offering robust performance in demanding environments. Its design supports both analog and digital signal transmission requirements.
The BLF881S serves as an earless variant within the same family. Both share identical electrical characteristics but differ in mechanical packaging. Verify mounting hole configurations when substituting between the flanged and earless versions.