BLF881S,112

Overview

The BLF881S,112 is a 140 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications across the UHF band. It delivers rated power from HF to 1 GHz with excellent ruggedness and broadband performance. The device features integrated ESD protection and RoHS compliance. Key electrical parameters include a drain-source voltage of 50 V, quiescent drain current of 0.5 A, and power gain of 21 dB. At 860 MHz, it achieves a peak envelope power load of 140 W with 49% drain efficiency in Class AB operation.

Feature Summary

• Integrated electrostatic discharge (ESD) protection
• High power gain and high efficiency
• Excellent ruggedness suitable for digital transmitters

Applications

• Communication transmitter applications in the UHF band
• Industrial applications in the UHF band
• Broadcast transmitter applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm that the component meets all required environmental standards and regulatory compliance specifications before finalizing procurement orders.

Selection Notes

Select this component for UHF band applications requiring robust performance up to 1 GHz. Ensure the design accommodates the specified thermal resistance and junction temperature limits. Verify compatibility with the SOT467B earless ceramic package for proper mounting and heat dissipation.

Part Context

This part belongs to the BLF881 series of UHF power LDMOS transistors manufactured by Ampleon USA Inc. The BLF881S variant specifically utilizes an earless ceramic package (SOT467B), distinguishing it from flanged versions within the same product family.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume interchangeability with other models without confirming pinout, package dimensions, and electrical specifications match exactly.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) rating is 104 V.

Does the device include built-in protection features?

Yes, the BLF881S includes integrated electrostatic discharge (ESD) protection.

What is the typical power gain at 860 MHz?

The typical power gain is 21 dB when operating at 860 MHz with a drain-source voltage of 50 V and a quiescent drain current of 0.5 A.